PREFERENTIAL IN-WATER OXIDATION AROUND DEFECTS IN UNDOPED LEC SEMI-INSULATING GAAS WAFERS

被引：1
|
作者：
YASUAMI, S
FUKUTA, K
NAKANISI, T
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1985年 / 24卷 / 10期
关键词：
D O I：
10.1143/JJAP.24.1327
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1327 / 1330
页数：4
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