Semi-insulating LEC GaAs substrates with an improved macroscopic and mesoscopic homogeneity

被引：6
|
作者：
Jurisch, M [1 ]
Flade, T [1 ]
Hoffmann, B [1 ]
Kohler, A [1 ]
Korb, J [1 ]
Kretzer, U [1 ]
Reinhold, T [1 ]
Weinert, B [1 ]
机构：
[1] GTT TECHNOL,FREIBERG,GERMANY
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 44卷 / 1-3期
关键词：
gallium arsenide; macroscopic and mesoscopic homogeneity; crystal inhomogeneity;
D O I：
10.1016/S0921-5107(96)01916-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A semi-quantitative understanding of the thermochemistry of boron oxide gettering ability and the influence of gas phase composition on the GaAs-melt in synthesis and growth allows LEG-growth of carbon controlled semi-insulating GaAs-crystals on a production scale. By optimization of thermal growth conditions and of a two-step post-growth ingot annealing procedure the scatter of electrical parameters among crystals has been significantly reduced and the homogeneity of individual crystals on a macroscopic and mesoscopic scale has been improved. (C) 1997 Published by Elsevier Science S.A.
引用
收藏
页码：198 / 202
页数：5
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