HETEROEPITAXIAL GROWTH OF TUNGSTEN CARBIDE FILMS ON W(110) BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

被引：11
|
作者：
KATOH, M [1 ]
KAWARADA, H [1 ]
机构：
[1] WASEDA UNIV,DEPT ELECTR & COMMUN ENGN,SHINJUKU KU,TOKYO 169,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 7A期
关键词：
TUNGSTEN; TUNGSTEN CARBIDE; HETEROEPITAXIAL GROWTH; CVD; MICROWAVE PLASMA; ECR PLASMA;
D O I：
10.1143/JJAP.34.3628
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Tungsten carbide (WC) layers have been grown epitaxially on tungsten single crystals for the first time by using microwave plasma and electron cyclotron resonance plasma carburization of single-crystalline tungsten. WC on tungsten is grown epitaxially as (0001)WC//(110)W in the alignment [1 (2) over bar 10]WC//[(1) over bar 11]W.
引用
收藏
页码：3628 / 3630
页数：3
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