HETEROEPITAXIAL GROWTH OF TUNGSTEN CARBIDE FILMS ON W(110) BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

被引：11

作者：

KATOH, M ^{[1
]}

KAWARADA, H ^{[1
]}

机构：

[1] WASEDA UNIV,DEPT ELECTR & COMMUN ENGN,SHINJUKU KU,TOKYO 169,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 7A期

关键词：

TUNGSTEN; TUNGSTEN CARBIDE; HETEROEPITAXIAL GROWTH; CVD; MICROWAVE PLASMA; ECR PLASMA;

D O I：

10.1143/JJAP.34.3628

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tungsten carbide (WC) layers have been grown epitaxially on tungsten single crystals for the first time by using microwave plasma and electron cyclotron resonance plasma carburization of single-crystalline tungsten. WC on tungsten is grown epitaxially as (0001)WC//(110)W in the alignment [1 (2) over bar 10]WC//[(1) over bar 11]W.

引用

页码：3628 / 3630

页数：3

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