GROWTH, ANNEALING, AND CHARACTERIZATION OF HGZNTE LIQUID-PHASE EPITAXY LAYERS

Epitaxial layers of Hg, xZnxTe(0.12<x<0.25) were grown by horizontal liquid phase epitaxy technique on closely lattice matched CdZnTe substrates. The growth conditions in which the rate of growth was limited by the diffusion of the solutes in the liquid were found. Post-growth annealing study of the epilayers revealed the ability to control the epilayers electrical properties by in-diffusion of Hg. The annealing at the temperature of 340 °C resulted in p-type epilayers with hole concentration of ~ 1 X 10 cm \\\\\\\\ mobility of 380–600 cm/Vs and lifetime of 20–40 ns (for long-wavelength infrared epilayers), measured at 77 K. The results of the annealing at the temperature of 220 °C were dependent on the annealing time and the substrates. n-Type epilayers were characterized, showing electron mobility dependence on the energy band gap and temperature. The results of preliminary experiments of ion implantation into the annealed, p-type epilayers are discussed. © 1990, American Vacuum Society. All rights reserved.