Growth of dilute GaSbN layers by liquid-phase epitaxy

被引：17
|
作者：
Mondal, A.
Das, T. D.
Halder, N.
Dhar, S.
Kumar, J.
机构：
[1] Univ Calcutta, Dept Elect Sci, Kolkata 700009, W Bengal, India
[2] Anna Univ, Ctr Crystal Growth, Madras 600025, Tamil Nadu, India
来源：
JOURNAL OF CRYSTAL GROWTH | 2006年 / 297卷 / 01期
关键词：
atomic force microscopy; X-ray diffraction; liquid-phase epitaxy; semiconducting III-V materials; antimonides; semiconducting gallium compounds;
D O I：
10.1016/j.jcrysgro.2006.09.042
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We report the growth of dilute GaSbN layers on GaSb substrates by liquid-phase epitaxy using polycrystalline GaN as the source of nitrogen in the growth melt. Atomic force microscopy shows uniform layer surface with root mean square roughness of 2.6 run. Energy dispersive X-ray measurements confirm the presence of nitrogen in the grown layer. The material is further characterized by high-resolution X-ray diffraction and Fourier transform infrared spectroscopy measurements. Nitrogen incorporation up to 1.7% is obtained with a corresponding band gap reduction of 0.37eV. (c) 2006 Elsevier B.V. All rights reserved.
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收藏
页码：4 / 6
页数：3
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