Characterization of dilute InPN layers grown by liquid phase epitaxy

被引：10

作者：

Das, T. D. ^{[1
]}

Dhar, S. ^{[1
]}

Arora, B. M. ^{[2
]}

机构：

[1] Univ Calcutta, Dept Elect Sci, Kolkata 700009, W Bengal, India

[2] Tata Inst Fundamental Res, Dept Condensed Matter Phys, Bombay 400005, Maharashtra, India

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 10期

关键词：

annealing; energy gap; Hall effect; III-V semiconductors; indium compounds; liquid phase epitaxial growth; photoluminescence; semiconductor growth; semiconductor thin films; X-ray diffraction;

D O I：

10.1063/1.3028998

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have grown dilute InPN layers by liquid phase epitaxy and characterized them using high resolution x-ray diffraction, optical absorption, low temperature photoluminescence, and Hall measurement techniques. Our results indicate that a maximum amount of 0.2% nitrogen has been incorporated in the material with a band gap lowering consistent with expectations. The crystalline quality of the material is found to improve upon nitrogen incorporation. Large increase in luminescence from the material is observed after a high temperature annealing.

引用

页数：4

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