CARRIER INJECTION INTO HEAVILY DOPED REGIONS OF A P+-N-N+ DIODE

被引：0
|
作者：
RYZHIKOV, IV
PAVLICHE.VI
KMITA, TG
机构：
来源：
RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR | 1967年 / 12卷 / 05期
关键词：
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：790 / &
相关论文
共 50 条
  • [21] High performance of diamond p+-i-n+ junction diode fabricated using heavily doped p+ and n+ layers
    Oyama, Kazuihiro
    Ri, Sung-Gi
    Kato, Hiromitsu
    Ogura, Masahiko
    Makino, Toshiharu
    Takeuchi, Daisuke
    Tokuda, Norio
    Okushi, Hideyo
    Yamasaki, Satoshi
    [J]. APPLIED PHYSICS LETTERS, 2009, 94 (15)
  • [22] ON PROBLEM OF CARRIER DISTRIBUTION AND VARIATION OF LIFETIME IN BASE REGION OF A P-N-N+ DIODE AT HIGH INJECTION LEVELS
    BARANOV, LI
    KLIMOV, BN
    SELISHCH.GV
    [J]. RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1966, 11 (08): : 1250 - &
  • [23] Novel multiple lateral polysilicon p+-n-n+ and p+-p-n+ diodes
    Karnik, SV
    Alexander, S
    Bruce, W
    Hatalis, MK
    [J]. FLAT PANEL DISPLAY TECHNOLOGY AND DISPLAY METROLOGY II, 2001, 4295 : 120 - 124
  • [24] Phosphorus and carrier density of heavily n-type doped germanium
    Takinai, K.
    Wada, K.
    [J]. JOURNAL OF APPLIED PHYSICS, 2016, 119 (18)
  • [25] COMPARISON BETWEEN N+-P-P+ AND P+-N-N+ SILICON IMPATT DIODES
    LEE, CM
    HADDAD, GI
    LOMAX, RJ
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (02) : 137 - 141
  • [26] CORNER CURRENTS IN RECTANGULAR DIFFUSED P+-N-N+ DIODES
    ROULSTON, DJ
    ELSAID, MH
    LAU, M
    WATT, LAK
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (03) : 392 - 393
  • [27] HIGH-POWER PULSED UHF AND L-BAND P+-N-N+ SILICON TRAPATT DIODE LASERS
    OBAH, COG
    BENKO, E
    BOWERS, HC
    MIDFORD, TA
    REGIER, RD
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1975, 23 (12) : 959 - 970
  • [28] OSCILLATION IN P+-N-N+ AVALANCHE DIODES AT INTERMEDIATE FREQUENCIES
    HOFFLINGER, B
    [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (03): : 425 - +
  • [29] MINORITY-CARRIER INJECTION INTO HEAVILY DOPED SILICON
    SLOTBOOM, JW
    [J]. SOLID-STATE ELECTRONICS, 1977, 20 (02) : 167 - 170
  • [30] ANALYTICAL MODEL OF P+-N-N+ DIODES AT MEDIUM VOLTAGE
    BELLONE, S
    CARUSO, A
    SPIRITO, P
    [J]. ALTA FREQUENZA, 1978, 47 (12): : 843 - 850
12345