共 50 条
- [1] CURRENT-VOLTAGE CHARACTERISTIC OF A P-N-N+ DIODE OBTAINED ALLOWING FOR A CHANGE IN CARRIER LIFETIME IN BASE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (01): : 120 - &
- [2] REACTIVE PROPERTIES OF SEMICONDUCTOR P-N-N+ STRUCTURES AT HIGH INJECTION LEVELS RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1967, 12 (08): : 1374 - &
- [3] THEORY OF FREQUENCY PROPERTIES OF LONG P-N-N+ DIODES FOR HIGH INJECTION LEVELS RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1971, 16 (08): : 1405 - &
- [4] DISTRIBUTION OF PHOTOCURRENT IN N-TYPE REGION OF A P-N-N+ STRUCTURE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (10): : 1307 - &
- [6] EFFECT OF CONCENTRATION-DEPENDENCE OF EXCESS-CARRIER LIFETIME ON VOLT-AMPERE CHARACTERISTIC OF A P-I-N (P-N-N+) DIODE RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1971, 16 (02): : 341 - &
- [7] Measurement of Carrier Lifetime in P-S-N Diodes at High Injection Levels. Siemens Forschungs- und Entwicklungsberichte/Siemens Research and Development Reports, 1973, 2 (02): : 69 - 72
- [8] Lifetime of nonequilibrium charge carriers in the base of p-n-junction semiconductor diode at arbitrary injection levels Journal of Contemporary Physics (Armenian Academy of Sciences), 2008, 43 : 183 - 189
- [10] INVESTIGATION OF FREQUENCY CHARACTERISTICS OF P-N-N+ DIODES WITH A STEADY-STATE CARRIER-DENSITY DISTRIBUTION MINIMUM IN BASE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (01): : 62 - &