共 50 条
- [1] THEORY OF FREQUENCY PROPERTIES OF LONG P-N-N+ DIODES FOR HIGH INJECTION LEVELS RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1971, 16 (08): : 1405 - &
- [2] ON PROBLEM OF CARRIER DISTRIBUTION AND VARIATION OF LIFETIME IN BASE REGION OF A P-N-N+ DIODE AT HIGH INJECTION LEVELS RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1966, 11 (08): : 1250 - &
- [3] RECOMBINATION RADIATION FROM P-N-N+ STRUCTURES IN INSB SOVIET PHYSICS-SOLID STATE, 1964, 6 (02): : 505 - 506
- [4] INFLUENCE OF TRAPPING CENTERS ON CURRENT CHARACTERISTICS OF A SEMICONDUCTOR P-N-N+ STRUCTURE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (10): : 1251 - +
- [5] INJECTION INSTABILITY IN SEMICONDUCTOR STRUCTURES WITH P-N-JUNCTIONS DOKLADY AKADEMII NAUK SSSR, 1989, 308 (03): : 601 - 605
- [7] REACTIVE PROPERTIES OF A P-I-N DIODE IN LARGE-SIGNAL MODE OF OPERATION FOR HIGH INJECTION LEVELS RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1971, 16 (04): : 653 - +
- [8] BIAS-FIELD DISTRIBUTION OF HIGH-POWER P-N-N+ IMPATT DIODES ELECTRONICS & COMMUNICATIONS IN JAPAN, 1969, 52 (08): : 144 - +