REACTIVE PROPERTIES OF SEMICONDUCTOR P-N-N+ STRUCTURES AT HIGH INJECTION LEVELS

被引：0
|
作者：
ARONOV, DA
KOTOV, YP
机构：
来源：
RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR | 1967年 / 12卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：1374 / &
相关论文
共 50 条
  • [41] Lifetime of Nonequilibrium Charge Carriers in the Base of p-n-Junction Semiconductor Diode at Arbitrary Injection Levels
    Aramyan, N. S.
    JOURNAL OF CONTEMPORARY PHYSICS-ARMENIAN ACADEMY OF SCIENCES, 2008, 43 (04) : 183 - 189
  • [42] Unusual properties of metastable (Ga,In)(N,As) containing semiconductor structures
    Klar, PJ
    Grüning, H
    Chen, L
    Hartmann, T
    Golde, D
    Güngerich, M
    Heimbrodt, W
    Koch, J
    Volz, K
    Kunert, B
    Torunski, T
    Stolz, W
    Polimeni, A
    Capizzi, M
    Dumitras, G
    Geelhaar, L
    Riechert, H
    IEE PROCEEDINGS-OPTOELECTRONICS, 2003, 150 (01): : 28 - 35
  • [43] Explanation of some experimental phenomena in MIM-LCD by using a p-n-n+ band model
    Liu, HW
    Wu, Y
    Fu, SQ
    Ma, K
    Huang, XM
    LIQUID CRYSTALS: PHYSICS, TECHNOLOGY AND APPLICATIONS, 1998, 3318 : 163 - 165
  • [44] Double injection in graphene p-i-n structures
    Ryzhii, V.
    Semenikhin, I.
    Ryzhii, M.
    Svintsov, D.
    Vyurkov, V.
    Satou, A.
    Otsuji, T.
    JOURNAL OF APPLIED PHYSICS, 2013, 113 (24)
  • [45] Double injection in graphene p-i-n structures
    Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577, Japan
    不详
    不详
    1600, American Institute of Physics Inc. (113):
  • [46] COMPUTER SIMULATION OF SILICON READ AND P-N-N+ IMPATT DIODES UNDER LARGE SIGNAL CONDITIONS
    MATSUMURA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (01) : 82 - +
  • [47] INFLUENCE OF UNIAXIAL PRESSURE ON PROPERTIES OF p + -n-n + AND p + -n-p + SILICON STRUCTURES.
    Sultanov, N.A.
    Usmanov, K.U.
    1600, (09):
  • [48] ABRUPT P-N JUNCTIONS AT ARBITRARY INJECTION LEVELS
    BARBER, HD
    SOLID-STATE ELECTRONICS, 1969, 12 (05) : 425 - +
  • [49] A DYNAMIC-MODEL OF THE P-N-N+ STEP RECOVERY DIODES FOR THE NUMERICAL-ANALYSIS OF PULSE CIRCUITS
    CEREMUGA, J
    SOLID-STATE ELECTRONICS, 1981, 24 (06) : 501 - 510
  • [50] Measurement of Carrier Lifetime in P-S-N Diodes at High Injection Levels.
    Dannhaeuser, F.
    Siemens Forschungs- und Entwicklungsberichte/Siemens Research and Development Reports, 1973, 2 (02): : 69 - 72
12345