SPECIAL FEATURES OF THE CAPACITANCE-VOLTAGE CHARACTERISTICS OF AN MIS STRUCTURE MADE OF A GLASSY CHALCOGENIDE SEMICONDUCTOR

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作者：
GRUSHKO, NS
GOGLIDZE, TI
PANASYUK, LM
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1982年 / 16卷 / 07期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：812 / 813
页数：2
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