SPECIAL FEATURES OF THE CAPACITANCE-VOLTAGE CHARACTERISTICS OF AN MIS STRUCTURE MADE OF A GLASSY CHALCOGENIDE SEMICONDUCTOR

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作者：

GRUSHKO, NS

GOGLIDZE, TI

PANASYUK, LM

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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1982年 / 16卷 / 07期

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O469 [凝聚态物理学];

学科分类号：

070205 ;

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页码：812 / 813

页数：2

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