Radiation effects on scientific CMOS image sensor

被引：0

作者：

Zhao, Yuanfu ^{[1
]}

Liu, Liyan ^{[1
]}

Liu, Xiaohui ^{[1
]}

Jin, Xiaofeng ^{[1
]}

Li Xiang ^{[1
]}

机构：

[1] Beijing Microelect Technol Inst, Beijing 100076, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2015年 / 36卷 / 11期

关键词：

CMOS image sensor (APS); dark current; dark signal response non-uniformity; total dose effects; single event effects;

D O I：

10.1088/1674-4926/36/11/114007

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

systemic solution for radiation hardened design is presented. Besides, a series of experiments have been carried out on the samples, and then the photoelectric response characteristic and spectral characteristic before and after the experiments have been comprehensively analyzed. The performance of the CMOS image sensor with the radiation hardened design technique realized total-dose resilience up to 300 krad(Si) and resilience to single-event latch up for LET up to110 MeV center dot cm(2)/mg.

引用

页数：5

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