PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON PREPARED BY CHEMICAL VAPOR-DEPOSITION

被引：36

作者：

ELLIS, FB

GORDON, RG

PAUL, W

YACOBI, BG

机构：

[1] HARVARD UNIV,DEPT CHEM,CAMBRIDGE,MA 02138

[2] HARVARD UNIV,DIV APPL SCI,CAMBRIDGE,MA 02138

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 12期

关键词：

D O I：

10.1063/1.333042

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：4309 / 4317

页数：9

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