共 50 条
- [1] PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON PREPARED BY CHEMICAL VAPOR-DEPOSITIONJOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 719 - 722ELLIS, FBGORDON, RGPAUL, WYACOBI, BG
- [2] CHEMICAL VAPOR-DEPOSITION OF HYDROGENATED AMORPHOUS-SILICONJOURNAL OF APPLIED PHYSICS, 1986, 59 (01) : 249 - 256KURTZ, SRPROSCIA, JGORDON, RG
- [3] PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON PREPARED BY CHEMICAL VAPOR-DEPOSITION FROM HIGHER SILANESPROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1983, 407 : 47 - 54DELAHOY, AE
- [4] BORON INCORPORATION IN HYDROGENATED AMORPHOUS-SILICON FILMS PREPARED BY CHEMICAL VAPOR-DEPOSITIONJOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 1419 - 1422FLINT, JHBRANZ, HMHARRIS, CJHAGGERTY, JSADLER, D
- [5] HYDROGENATED AMORPHOUS-SILICON HYDROGENATED AMORPHOUS-SILICON CARBIDE SUPERLATTICE PREPARED CONTINUOUSLY BY PULSED PLASMA AND PHOTO CHEMICAL VAPOR-DEPOSITIONJOURNAL OF APPLIED PHYSICS, 1992, 71 (10) : 5257 - 5259NAKANO, MTAKANO, AKAWASAKI, MKOINUMA, H
- [6] CHEMICAL VAPOR-DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON FROM DISILANEJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (10) : 2960 - 2968BOGAERT, RJRUSSELL, TWFKLEIN, MTROCHELEAU, REBARON, BN
- [7] PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON CARBIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITIONTHIN SOLID FILMS, 1989, 177 : 253 - 262KUHMAN, DGRAMMATICA, SJANSEN, F
- [8] EFFECT OF DEPOSITION PARAMETERS ON THE PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON FILMS PREPARED BY PHOTOCHEMICAL VAPOR-DEPOSITIONSOLAR ENERGY MATERIALS, 1990, 20 (1-2): : 139 - 148DE, ARAY, SBARUA, AK
- [9] CHEMICAL VAPOR-DEPOSITION OF BORON-DOPED HYDROGENATED AMORPHOUS-SILICONAPPLIED PHYSICS LETTERS, 1985, 47 (02) : 135 - 137ELLIS, FBDELAHOY, AE
- [10] HYDROGENATED AMORPHOUS-SILICON SCHOTTKY-BARRIER STRUCTURES PREPARED BY HOMOGENEOUS CHEMICAL VAPOR-DEPOSITIONJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (08) : C319 - C320KANICKI, JNIJS, JFSCOTT, BAPLECENIK, RMMEYERSON, BS