FORMATION OF METAL-RICH SILICIDES IN THE INITIAL-STAGE OF INTERFACIAL REACTIONS IN NB/SI SYSTEMS

被引:25
|
作者
NAKANISHI, T [1 ]
TAKEYAMA, M [1 ]
NOYA, A [1 ]
SASAKI, K [1 ]
机构
[1] KITAMI INST TECHNOL,FAC ENGN,DEPT MAT SCI,KITAMI,HOKKAIDO 090,JAPAN
关键词
D O I
10.1063/1.359584
中图分类号
O59 [应用物理学];
学科分类号
摘要
The interfacial reaction of Nb thin films on (100) Si indicates the first phase nucleation of metal-rich silicide and the occurrence of multiphases under certain annealing conditions. Nb3Si was identified as being the first nucleated phase at the annealing temperature of 550°C, and subsequently Nb5Si3 is found to be formed by annealing at 600°C. The multiphases of Nb3Si, Nb5Si3, and NbSi 2 were observed to be formed simultaneously in the specimen annealed at 650°C. The growth of NbSi2 by the out-diffusion of Si, which overcame the metal-rich phase, was observed at annealing temperatures over 700°C. © 1995 American Institute of Physics.
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收藏
页码:948 / 950
页数:3
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