FORMATION OF METAL-RICH SILICIDES IN THE INITIAL-STAGE OF INTERFACIAL REACTIONS IN NB/SI SYSTEMS

被引：25

作者：

NAKANISHI, T ^{[1
]}

TAKEYAMA, M ^{[1
]}

NOYA, A ^{[1
]}

SASAKI, K ^{[1
]}

机构：

[1] KITAMI INST TECHNOL,FAC ENGN,DEPT MAT SCI,KITAMI,HOKKAIDO 090,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 02期

关键词：

D O I：

10.1063/1.359584

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The interfacial reaction of Nb thin films on (100) Si indicates the first phase nucleation of metal-rich silicide and the occurrence of multiphases under certain annealing conditions. Nb3Si was identified as being the first nucleated phase at the annealing temperature of 550°C, and subsequently Nb5Si3 is found to be formed by annealing at 600°C. The multiphases of Nb3Si, Nb5Si3, and NbSi 2 were observed to be formed simultaneously in the specimen annealed at 650°C. The growth of NbSi2 by the out-diffusion of Si, which overcame the metal-rich phase, was observed at annealing temperatures over 700°C. © 1995 American Institute of Physics.

引用

页码：948 / 950

页数：3

共 37 条

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