1.3 MU-M INGAASP/INP MULTIQUANTUM-WELL LASERS GROWN BY VAPOR-PHASE EPITAXY

被引：28

|

作者：

YANASE, T

KATO, Y

MITO, I

YAMAGUCHI, M

NISHI, K

KOBAYASHI, K

LANG, R

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 17期

关键词：

D O I：

10.1049/el:19830477

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：700 / 701

页数：2

相关论文

共 50 条

[31] REDUCED TURN-ON DELAY-TIME IN 1.3-MU-M INGAASP/INP N-TYPE MODULATION-DOPED STRAINED MULTIQUANTUM-WELL LASERS
NAKAHARA, K
UOMI, K
TSUCHIYA, T
NIWA, A
ELECTRONICS LETTERS, 1995, 31 (10) : 809 - 811
[32] 17-GHZ DIRECT MODULATION BANDWIDTH AND IMPEDANCE CHARACTERISTICS OF VAPOR-PHASE REGROWN 1.3 MU-M INGAASP BURIED HETEROSTRUCTURE LASERS
SU, CB
LANZISERA, V
POWAZINIK, W
MELAND, E
SCHLAFER, J
OLSHANSKY, R
LAUER, RB
PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1985, 545 : 10 - 13
[33] GROWTH AND CHARACTERIZATION OF 1.3 MU-M CW GAINASP-INP LASERS BY LIQUID-PHASE EPITAXY
NG, WW
DAPKUS, PD
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) : 193 - 198
[34] LOW THRESHOLD, HIGH T0 INGAASP INP 1.3 MU-M LASERS GROWN ON P-TYPE INP SUBSTRATES
HASENBERG, TC
GARMIRE, E
APPLIED PHYSICS LETTERS, 1986, 49 (07) : 400 - 402
[35] LONG-WAVELENGTH INGAASP/INP MULTIQUANTUM-WELL DISTRIBUTED-FEEDBACK AND DISTRIBUTED-BRAGG-REFLECTOR LASERS GROWN BY CHEMICAL BEAM EPITAXY
TSANG, WT
WU, MC
CHEN, YK
CHOA, FS
LOGAN, RA
CHU, SNG
SERGENT, AM
MAGILL, P
REICHMANN, KC
BURRUS, CA
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (06) : 1370 - 1380
[36] 1.3 MU-M DECOUPLED CONFINEMENT HETEROSTRUCTURE LASERS GROWN BY CHEMICAL BEAM EPITAXY
HAUSSER, S
HARDER, CS
MEIER, HP
WALTER, W
APPLIED PHYSICS LETTERS, 1993, 62 (07) : 663 - 665
[37] LOW THRESHOLD 1.5 MU-M QUANTUM-WELL LASERS WITH CONTINUOUS LINEAR-GRADED-INDEX INGAASP LAYERS PREPARED BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
LIN, W
CHANG, CY
TU, YK
DAI, TA
HO, WJ
LEE, GY
SHI, TT
SHIAO, HP
APPLIED PHYSICS LETTERS, 1993, 62 (11) : 1239 - 1241
[38] HIGH-QUALITY COMPRESSIVELY STRAINED INP-BASED GAINAS(P)/GAINASP MULTIQUANTUM-WELL LASER STRUCTURES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
PERRIN, SD
SELTZER, CP
SPURDENS, PC
JOURNAL OF ELECTRONIC MATERIALS, 1994, 23 (02) : 81 - 85
[39] Strain relaxation in InGaAsP/InP grown by metal-organic vapor-phase epitaxy
Kitatani, T
Taike, A
Aoki, M
JOURNAL OF CRYSTAL GROWTH, 2004, 273 (1-2) : 19 - 25
[40] ACCELERATED AGING CHARACTERISTICS OF INGAASP-INP BURIED HETEROSTRUCTURE LASERS EMITTING AT 1.3 MU-M
MIZUISHI, K
HIRAO, M
TSUJI, S
SATO, H
NAKAMURA, M
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (07) : L429 - L432

← 1 2 3 4 5 →