共 50 条
- [31] MECHANISM OF FUNDAMENTAL ABSORPTION OF LIGHT IN P-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (12): : 2078 - &
- [32] ELECTRICAL PROPERTIES OF P-TYPE INSB AT LOW TEMPERATURES SOVIET PHYSICS-SOLID STATE, 1959, 1 (04): : 514 - 515
- [33] TRANSPORT PHENOMENA IN HEAVILY DOPED P-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (08): : 1005 - 1007
- [34] CYCLOTRON RESONANCE IN P-TYPE INSB AT MILLIMETRE WAVELENGTHS PHYSICS LETTERS, 1963, 6 (02): : 143 - 145
- [35] TEMPERATURE DEPENDENCE OF THERMOELECTRIC POWER OF P-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (06): : 912 - +
- [36] CONDUCTION IN MODERATELY DOPED COMPENSATED P-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (06): : 689 - 692
- [37] INVESTIGATION OF THE ACOUSTOELECTRONIC INTERACTION IN p-TYPE InSb AND COMPENSATED n-TYPE InSb. Soviet physics. Semiconductors, 1982, 16 (07): : 788 - 790
- [38] RESISTANCE OF P-TYPE INSB IN STRONG MAGNETIC FIELDS SOVIET PHYSICS SOLID STATE,USSR, 1965, 6 (08): : 2014 - &
- [39] ANOMALOUSLY ACCELERATED DIFFUSION OF PHOSPHORUS OUT OF AN ION-IMPLANTED SILICON LAYER UNDER PRESSURE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (03): : 302 - 304
- [40] Investigation of beryllium implanted P-type GaN MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 82 (1-3): : 82 - 84