ANOMALOUSLY ACCELERATED DIFFUSION OF SULFUR IN IMPLANTED P-TYPE INSB

被引：0
|
作者：
KORSHUNOV, AB
DUBROVSKAYA, EK
SOKOLOV, VI
TIKHONOVA, OV
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1982年 / 16卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：964 / 965
页数：2
相关论文
共 50 条
  • [1] DIFFUSION OF IMPLANTED BERYLLIUM IN N-TYPE AND P-TYPE GAAS
    DEAL, MD
    ROBINSON, HG
    APPLIED PHYSICS LETTERS, 1989, 55 (19) : 1990 - 1992
  • [2] DIFFUSION OF ION-IMPLANTED GOLD IN P-TYPE SILICON
    COFFA, S
    CALCAGNO, L
    CAMPISANO, SU
    CALLERI, G
    FERLA, G
    JOURNAL OF APPLIED PHYSICS, 1988, 64 (11) : 6291 - 6295
  • [3] OSCILLATIONS IN COMPENSATED P-TYPE INSB
    GIGIBERI.PG
    KARTSIVA.GA
    KEVANISH.GV
    MIRIANAS.SM
    NANOBASH.DI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (08): : 1102 - 1103
  • [4] CYCLOTRON RESONANCE IN P-TYPE INSB
    TOHVER, HT
    ASCARELL.G
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1968, 13 (01): : 94 - &
  • [5] ELECTRON MOBILITY IN P-TYPE INSB
    BARYSHEV, NS
    SHTIVELM.KY
    SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (04): : 1002 - +
  • [6] PIEZORESISTANCE CONSTANTS OF P-TYPE INSB
    TUZZOLINO, AJ
    PHYSICAL REVIEW, 1958, 109 (06): : 1980 - 1987
  • [7] RECOMBINATION PROCESSES IN P-TYPE INSB
    VOLKOV, AS
    GALAVANO.VV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (02): : 129 - &
  • [8] DOPING OF P-TYPE INSB WITH HOT SULFUR IONS (PROPERTIES OF P-N-JUNCTIONS)
    BELOTELOV, SV
    KORSHUNOV, AB
    SMIRNITSKII, VB
    SOLYAKOV, AN
    SHESTERIKOV, SA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (11): : 1230 - 1232
  • [9] IMPACT IONIZATION IN P-TYPE INSB
    DICK, CL
    ANCKERJO.B
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (09) : 2151 - &
  • [10] GALVANOMAGNETIC ANISOTROPY OF P-TYPE INSB
    OHMURA, Y
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, 21 (10) : 1886 - &
12345