COHERENT INSTABILITIES IN P-I-N AVALANCHE GAAS DIODES UP TO SUBMILLIMETER FREQUENCY-RANGE

被引:2
|
作者
LIPPENS, D
NIERUCHALSKI, JL
机构
关键词
D O I
10.1063/1.96890
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1464 / 1466
页数:3
相关论文
共 50 条
  • [1] INSTABILITY IN AVALANCHE REGION OF SI P-I-N DIODES
    OKUTO, Y
    KONDO, M
    NAGASHIM.I
    UCHIDA, I
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (05) : 533 - &
  • [2] LOW FREQUENCY OSCILLATION INDUCED BY ANORMALOUS AVALANCHE NEGATIVE RESISTANCE IN P-I-N DIODES
    OKUTO, Y
    KONDO, M
    NAGASHIMA, I
    UCHIDA, I
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (06) : 683 - +
  • [3] Avalanche Ruggedness of GaN p-i-n Diodes Grown on Sapphire Substrate
    Liu, Wenkai
    Xu, Weizong
    Zhou, Dong
    Ren, Fangfang
    Chen, Dunjun
    Yu, Peng
    Zhang, Rong
    Zheng, Youdou
    Lu, Hai
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 215 (18):
  • [4] Quantum oscillations in the photocurrent of GaAs/AlAs p-i-n diodes
    Vdovin, E. E.
    Ashdown, M.
    Patane, A.
    Eaves, L.
    Campion, R. P.
    Khanin, Yu. N.
    Henini, M.
    Makarovsky, O.
    [J]. PHYSICAL REVIEW B, 2014, 89 (20):
  • [5] CURRENT-VOLTAGE CHARACTERISTICS OF GAAS P-I-N AND N-I-N DIODES
    HRIVNAK, L
    MORVIC, M
    BETKO, J
    [J]. SOLID-STATE ELECTRONICS, 1977, 20 (05) : 417 - 419
  • [6] LARGE-SIGNAL COMPUTER SIMULATION OF SILICON P-I-N AVALANCHE DIODES
    MATSUMURA, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (12) : 1460 - +
  • [7] Avalanche multiplication and noise in sub-micron Si p-i-n diodes
    Tan, CH
    David, JPR
    Clark, J
    Rees, GJ
    Plimmer, SA
    Robbins, DJ
    Herbert, DC
    Carline, RT
    Leong, WY
    [J]. SILICON-BASED OPTOELECTRONICS II, 2000, 3953 : 95 - 102
  • [8] TEMPERATURE INFLUENCE ON GAAS-GUNN DIODES EFFICIENCY IN FREQUENCY-RANGE
    PROKHOROV, ED
    ARENDAR, VN
    BELETSKY, NI
    DYADCHENKO, AV
    [J]. RADIOTEKHNIKA I ELEKTRONIKA, 1976, 21 (11): : 2449 - 2450
  • [9] NEGATIVE RESISTANCE IN CHROMIUM-DOPED GAAS P-I-N DIODES
    SELWAY, PR
    NICOLLE, WM
    [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) : 4087 - &