PHOTOLUMINESCENCE OF AN INALAS/INGAAS QUANTUM-WELL STRUCTURE GROWN ON A GAAS SUBSTRATE

被引：15
|
作者：
HARMAND, JC
MATSUNO, T
INOUE, K
机构：
[1] Semiconductor Research Center, Matsushita Electric Industrial Co. Ltd, Moriguchi, Osaka
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1990年 / 29卷 / 02期
关键词：
GalnAs/ AllnAs on GaAs; Lattice mismatch; Linewidth; Molecular beam epitaxy; Photoluminescence; Quantum wells;
D O I：
10.1143/JJAP.29.L233
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An In0.53Ga0.47As/In0.52Al0.48As quantum well structure was grown on a GaAs substrate by molecular beam epitaxy. A linearly graded InGaAlAs layer grown at 380°C was used as a buffer layer. The photoluminescence of this structure was observed at 15 K. The InGaAs quantum well thicknesses ranged from 20 Å to 500 Å. Emission of each quantum well was clearly resolved. The luminescence linewidths were analyzed and compared to the results reported for the material system grown lattice-matched to InP. We deduced an enhancement of the alloy clustering and well thickness fluctuations which probably do not exceed 1 monolayer but which have a large lateral extension. These features are related to the lattice mismatch of the structure with the substrate. © 1990 IOP Publishing Ltd.
引用
收藏
页码：L233 / L235
页数：3
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