Reliability of InAlAs/InGaAs HEMTs grown on GaAs substrate with metamorphic buffer

被引：11
|
作者：
Dammann, M [1 ]
Chertouk, M [1 ]
Jantz, W [1 ]
Köhler, K [1 ]
Weimann, G [1 ]
机构：
[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany
来源：
MICROELECTRONICS RELIABILITY | 2000年 / 40卷 / 8-10期
关键词：
D O I：
10.1016/S0026-2714(00)00164-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The long term stability of 0.25 mu m InAlAs/InGaAs HEMTs grown on GaAs substrate with metamorphic buffer (MM-HEMT) was investigated by biased accelerated life tests in air and in nitrogen. By defining a 10%-degradation failure criterion of transconductance we found a life time of 2x10(7) h at T-ch=125 degrees C and an activation energy of 1.8 eV in nitrogen atmosphere. The median life and the activation energy were found to be much smaller in air, which can be explained by passivation of the silicon donors with fluorine. The life time and the degradation of electrical parameters of MM HEMTs in air and nitrogen is comparable to InP-based HEMTs. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1709 / 1713
页数：5
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