Picosecond photoluminescence dynamics in an InGaAs/GaAs quantum-well heterostructure

被引：4

作者：

Aleshkin, V. Ya ^{[1
]}

Dubinov, A. A. ^{[1
]}

Gavrilenko, L. V. ^{[1
]}

Krasilnik, Z. F. ^{[1
]}

Kuritsyn, K. I. ^{[1
]}

Kryzhkov, D. I. ^{[1
]}

Morozov, S. V. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

来源：

SEMICONDUCTORS | 2012年 / 46卷 / 07期

基金：

俄罗斯基础研究基金会;

关键词：

CARRIER; SEMICONDUCTORS; FEMTOSECOND; CAPTURE;

D O I：

10.1134/S1063782612070032

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The results of experimental studies of the subpicosecond relaxation dynamics of photoexcited charge carriers in an In0.22Ga0.78As/GaAs quantum-well heterostructure are reported. From photoluminescence studies of the structure by the upconversion technique, the cooling rate of charge carriers in the quantum well and the time of charge-carrier trapping into the well are estimated to be similar to 1 ps at 300 K and at similar to 6.5 ps at 10 K.

引用

页码：917 / 920

页数：4

共 50 条

[1] Picosecond photoluminescence dynamics in an InGaAs/GaAs quantum-well heterostructure
V. Ya. Aleshkin
A. A. Dubinov
L. V. Gavrilenko
Z. F. Krasilnik
K. I. Kuritsyn
D. I. Kryzhkov
S. V. Morozov
[J]. Semiconductors, 2012, 46 : 917 - 920
[2] PHOTOLUMINESCENCE STUDY OF GAAS/ALGAAS QUANTUM-WELL HETEROSTRUCTURE INTERFACES
YUAN, ZL
XU, ZY
XU, JZ
ZHENG, BZ
LUO, CP
YANG, XP
ZHANG, PH
[J]. ACTA PHYSICA SINICA-OVERSEAS EDITION, 1995, 4 (07): : 523 - 530
[3] RESONANT TUNNELING IN A GAAS/ALGAAS BARRIER/INGAAS QUANTUM-WELL HETEROSTRUCTURE
REED, MA
LEE, JW
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (13) : 845 - 847
[4] PHOTOLUMINESCENCE OF AN INALAS/INGAAS QUANTUM-WELL STRUCTURE GROWN ON A GAAS SUBSTRATE
HARMAND, JC
MATSUNO, T
INOUE, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (02): : L233 - L235
[5] OSCILLATORY PHOTOLUMINESCENCE EXCITATION IN INGAAS/GAAS STRAINED-LAYER QUANTUM-WELL STRUCTURES
AMBRAZEVICIUS, G
MARCINKEVICIUS, S
LIDEIKIS, T
NAUDZIUS, K
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (01) : 41 - 44
[6] ANALYSIS AND OPTIMIZATION OF QUANTUM-WELL THICKNESS FOR GAAS/ALGAAS AND INGAAS/GAAS/ALGAAS QUANTUM-WELL LASERS
ZOU, WX
MERZ, JL
COLDREN, LA
[J]. JOURNAL OF APPLIED PHYSICS, 1992, 72 (11) : 5047 - 5055
[7] ALGAAS/INGAAS/GAAS QUANTUM-WELL DOPED CHANNEL HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS
RUDEN, PP
SHUR, M
AKINWANDE, AI
NOHAVA, JC
GRIDER, DE
BAEK, JH
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (10) : 2171 - 2175
[8] Functional AlGaAs/GaAs heterostructure-emitter bipolar transistor with a pseudomorphic InGaAs/GaAs quantum-well base
Tsai, JH
[J]. MICROELECTRONICS RELIABILITY, 1999, 39 (09) : 1379 - 1387
[9] CONFINEMENT SUBBANDS IN AN INGAAS/GAAS NONSQUARE QUANTUM-WELL
LI, EH
MICALLEF, J
WEISS, BL
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (1A-B): : L7 - L10
[10] Strained-layer InGaAs quantum-well heterostructure lasers
Coleman, JJ
[J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2000, 6 (06) : 1008 - 1013

← 1 2 3 4 5 →