SELECTION OF ORGANOMETALLICS FOR MOCVD OF HG1-XCDXTE AND DOPED SEMICONDUCTORS

被引：21
|
作者：
PAIN, GN
CHRISTIANSZ, GI
DICKSON, RS
DEACON, GB
WEST, BO
MCGREGOR, K
ROWE, RS
机构：
[1] MONASH UNIV,DEPT CHEM,CLAYTON,VIC 3168,AUSTRALIA
[2] TELECOM AUSTRALIA RES LABS,INFRARED OPTOELECTR,CLAYTON,VIC 3168,AUSTRALIA
来源：
POLYHEDRON | 1990年 / 9卷 / 07期
关键词：
D O I：
10.1016/S0277-5387(00)84292-8
中图分类号：
O61 [无机化学];
学科分类号：
070301 ; 081704 ;
摘要：
Organometallic feedstocks of cadmium, mercury and tellurium, as well as dopants to create n-type, p-type or diluted magnetic semiconductors, can impose limits on the range of programmable parameters in the MOCVD reactor. The influence of the chosen organometallics on the crystal growth process is critically reviewed. © 1990.
引用
收藏
页码：921 / 929
页数：9
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