THERMODYNAMIC ANALYSIS OF THE GROWTH OF HG1-XCDXTE BY MOCVD

被引：1
|
作者：
LIAW, IR
CHOU, KS
LIN, MS
机构：
[1] NATL TSING HUA UNIV,DEPT CHEM ENGN,HSINCHU 30043,TAIWAN
[2] NATL TSING HUA UNIV,DEPT ELECT ENGN,HSINCHU 300,TAIWAN
来源：
JOURNAL OF CRYSTAL GROWTH | 1988年 / 87卷 / 04期
关键词：
D O I：
10.1016/0022-0248(88)90101-7
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：529 / 534
页数：6
相关论文
共 50 条
  • [1] MOCVD growth of Hg1-xCdxTe heterostructures for uncooled infrared photodetectors
    Piotrowski, A
    Madejczyk, P
    Gawron, W
    Klos, K
    Romanis, M
    Grudzien, M
    Piotrowski, J
    Rogalski, A
    [J]. OPTO-ELECTRONICS REVIEW, 2004, 12 (04) : 453 - 458
  • [2] MOCVD HG1-XCDXTE/GAAS FOR IR DETECTORS
    EDWALL, DD
    CHEN, JS
    BAJAJ, J
    GERTNER, ER
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 : S221 - S224
  • [3] MESFET FABRICATION ON MOCVD GROWN HG1-XCDXTE
    LEECH, PW
    GWYNN, PJ
    PAIN, GN
    PETKOVIC, N
    THOMPSON, J
    [J]. ELECTRONICS LETTERS, 1990, 26 (04) : 221 - 222
  • [4] Growth and physics of Hg1-xCdxTe and type IIIHgTe/Hg1-xCdxTe heterostructures
    Becker, CR
    Zhang, XC
    Ortner, K
    Schmidt, J
    Pfeuffer-Jeschke, A
    Latussek, V
    Landwehr, G
    [J]. PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS, 2001, 2 : 61 - 64
  • [5] Epitaxial growth of Hg1-xCdxTe
    Duric, ZG
    Jovic, VB
    [J]. ADVANCED MATERIALS FOR HIGH TECHNOLOGY APPLICATIONS, 1996, 214 : 57 - 64
  • [6] SELECTION OF ORGANOMETALLICS FOR MOCVD OF HG1-XCDXTE AND DOPED SEMICONDUCTORS
    PAIN, GN
    CHRISTIANSZ, GI
    DICKSON, RS
    DEACON, GB
    WEST, BO
    MCGREGOR, K
    ROWE, RS
    [J]. POLYHEDRON, 1990, 9 (07) : 921 - 929
  • [7] COMPOSITION CONTROL IN HG1-XCDXTE GROWTH BY PHOTOASSISTED MOCVD USING AN EXCIMER LASER
    TERADA, T
    FUJITA, Y
    FUJII, S
    IUCHI, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) : 54 - 57
  • [8] ISOTHERMAL GROWTH OF HG1-XCDXTE FILMS
    MONCHAMP, R
    DEVANEY, C
    MILES, J
    [J]. PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1983, 409 : 9 - 11
  • [9] DETERMINATION OF COMPOSITION, THICKNESS AND GROWTH-RATE PROFILES OF MOCVD GROWN HG1-XCDXTE
    RUSSO, SP
    PAIN, GN
    JOHNSTON, PN
    ELLIMAN, RG
    [J]. JOURNAL OF CRYSTAL GROWTH, 1993, 131 (1-2) : 124 - 132
  • [10] THERMODYNAMIC ANALYSIS OF METALORGANIC VAPOR-PHASE EPITAXY OF HG1-XCDXTE
    WEIDEMANN, G
    JACOBS, K
    [J]. JOURNAL OF CRYSTAL GROWTH, 1992, 125 (3-4) : 477 - 486
12345