DETERMINATION OF COMPOSITION, THICKNESS AND GROWTH-RATE PROFILES OF MOCVD GROWN HG1-XCDXTE

被引：3
|
作者：
RUSSO, SP
PAIN, GN
JOHNSTON, PN
ELLIMAN, RG
机构：
[1] EPI CRYSTAL SUPPLIES PTY LTD,MONBULK 3793,AUSTRALIA
[2] AUSTRALIAN NATL UNIV,RES SCH PHYS SCI & ENGN,DEPT ELECTR MAT ENGN,CANBERRA,ACT 2601,AUSTRALIA
来源：
JOURNAL OF CRYSTAL GROWTH | 1993年 / 131卷 / 1-2期
关键词：
D O I：
10.1016/0022-0248(93)90404-K
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Rutherford backscattering spectrometry (RBS) and particle induced X-ray emission (PIXE) measurements have been performed on epitaxial Hg1-xCdxTe (MCT) layers on sapphire to determine composition, thickness and growth rates at discrete points along, and perpendicular to, the direction of gas flow in the MOCVD reactor cell. Continuous profiles of each property, over an area of 40 X 90 mm, have then been calculated by polynomial fitting and scaling of these discrete points. These profiles were used to compare MOCVD growth of MCT onto substrates placed on and below the cracking susceptor in the reactor cell.
引用
收藏
页码：124 / 132
页数：9
相关论文
共 50 条
  • [1] MESFET FABRICATION ON MOCVD GROWN HG1-XCDXTE
    LEECH, PW
    GWYNN, PJ
    PAIN, GN
    PETKOVIC, N
    THOMPSON, J
    [J]. ELECTRONICS LETTERS, 1990, 26 (04) : 221 - 222
  • [2] THERMODYNAMIC ANALYSIS OF THE GROWTH OF HG1-XCDXTE BY MOCVD
    LIAW, IR
    CHOU, KS
    LIN, MS
    [J]. JOURNAL OF CRYSTAL GROWTH, 1988, 87 (04) : 529 - 534
  • [3] COMPOSITION CONTROL IN HG1-XCDXTE GROWTH BY PHOTOASSISTED MOCVD USING AN EXCIMER LASER
    TERADA, T
    FUJITA, Y
    FUJII, S
    IUCHI, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) : 54 - 57
  • [4] THE DEVELOPMENT OF AN EDXRF TECHNIQUE FOR THE DETERMINATION OF THE STOICHIOMETRY AND THICKNESS OF MOCVD GROWN EPITAXIAL LAYERS OF HG1-XCDXTE AND A COMPARISON WITH PIXE ANALYSIS
    JOHNSTON, PN
    RUSSO, SP
    SHORT, RC
    WALKER, SR
    PAIN, GN
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 69 (2-3): : 361 - 364
  • [5] STUDY OF MOCVD GROWN HG1-XCDXTE BY ION-BEAM TECHNIQUES
    JOHNSTON, PN
    RUSSO, SP
    ELLIMAN, RG
    PAIN, GN
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 79 (1-4): : 490 - 492
  • [6] COMPOSITION STUDY OF PHOTOCHEMICALLY GROWN OXIDES OF HG1-XCDXTE
    DAVIS, GD
    BUCHNER, SP
    BYER, NE
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 670 - 671
  • [7] INTERDIFFUSION PROFILES IN MOCVD CDTE/HGTE SUPERLATTICES AND HG1-XCDXTE MULTILAYERS
    ROSSOUW, CJ
    PAIN, GN
    GLANVILL, SR
    MCDONALD, DC
    [J]. JOURNAL OF CRYSTAL GROWTH, 1990, 106 (04) : 673 - 682
  • [8] MOCVD growth of Hg1-xCdxTe heterostructures for uncooled infrared photodetectors
    Piotrowski, A
    Madejczyk, P
    Gawron, W
    Klos, K
    Romanis, M
    Grudzien, M
    Piotrowski, J
    Rogalski, A
    [J]. OPTO-ELECTRONICS REVIEW, 2004, 12 (04) : 453 - 458
  • [9] MOCVD HG1-XCDXTE/GAAS FOR IR DETECTORS
    EDWALL, DD
    CHEN, JS
    BAJAJ, J
    GERTNER, ER
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 : S221 - S224
  • [10] Improved determination of matrix composition of Hg1-xCdxTe by SIMS
    Sheng, J
    Wang, L
    Lux, GE
    Gao, YM
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (06) : 588 - 592
12345