INSTABILITIES IN ELECTRON-HOLE PLASMA OF HG1-XCDXTE SEMICONDUCTORS

被引：0
|
作者：
BOGDANOV, EV
FLEYSHMAN, LS
机构：
来源：
VESTNIK MOSKOVSKOGO UNIVERSITETA SERIYA 3 FIZIKA ASTRONOMIYA | 1985年 / 26卷 / 02期
关键词：
D O I：
暂无
中图分类号：
P1 [天文学];
学科分类号：
0704 ;
摘要：
引用
收藏
页码：91 / 94
页数：4
相关论文
共 50 条
  • [1] SOME PROPERTIES OF A HIGH-DENSITY ELECTRON-HOLE PLASMA IN HG1-XCDXTE
    NURMIKKO, AV
    SCHWARTZ, BD
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01): : 229 - 230
  • [2] PHOTO-HALL MEASUREMENTS ON LASER-GENERATED ELECTRON-HOLE PLASMAS IN HG1-XCDXTE
    BARTOLI, FJ
    MEYER, JR
    ALLEN, RE
    HOFFMAN, CA
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01): : 241 - 243
  • [3] HOLE SCATTERING MECHANISMS IN HG1-XCDXTE
    YADAVA, RDS
    GUPTA, AK
    WARRIER, AVR
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1994, 23 (12) : 1359 - 1378
  • [4] PLASMA ANODIZATION OF HG1-XCDXTE
    NEMIROVSKY, Y
    GOSHEN, R
    [J]. APPLIED PHYSICS LETTERS, 1980, 37 (09) : 813 - 815
  • [5] ELECTRON-HOLE PLASMA INSTABILITIES
    ROBINSON, BB
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (03) : 200 - +
  • [6] DEFECTS AND POSITRON STATES IN HG1-XCDXTE SEMICONDUCTORS
    HE, YJ
    LI, XF
    LI, LH
    YU, WZ
    XIAO, JR
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1989, 1 : SA91 - SA95
  • [7] ELECTRON-HOLE RECOMBINATION IN NARROW-BAND-GAP HG1-XCDXTE AND STIMULATED-EMISSION OF LO PHONONS
    XIE, H
    RAMMOHAN, LR
    WOLFF, PA
    [J]. PHYSICAL REVIEW B, 1990, 42 (06): : 3620 - 3627
  • [8] Stoichiometry determination across the face of Hg1-xCdxTe semiconductors
    Banisaeid, S
    Rahemi, H
    Tayyari, SF
    [J]. ASIAN JOURNAL OF CHEMISTRY, 2005, 17 (02) : 702 - 706
  • [9] SELECTION OF ORGANOMETALLICS FOR MOCVD OF HG1-XCDXTE AND DOPED SEMICONDUCTORS
    PAIN, GN
    CHRISTIANSZ, GI
    DICKSON, RS
    DEACON, GB
    WEST, BO
    MCGREGOR, K
    ROWE, RS
    [J]. POLYHEDRON, 1990, 9 (07) : 921 - 929
  • [10] THE INTERFACE OF PLASMA-ANODIZED HG1-XCDXTE
    NEMIROVSKY, Y
    GOSHEN, R
    KIDRON, I
    [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 4888 - 4895
12345