A 140 mV 0.8 mu A CMOS voltage reference based on sub-threshold MOSFETs

被引：0
|
作者：
Yang Miao [1 ]
Sun Weifeng [1 ]
Xu Shen [1 ]
Wang Yifeng [1 ]
Lu Shengli [1 ]
机构：
[1] Southeast Univ, Natl ASIC Syst Engn Res Ctr, Nanjing 210096, Jiangsu, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2011年 / 32卷 / 11期
关键词：
sub-threshold; peaking current mirror; low voltage; low power;
D O I：
10.1088/1674-4926/32/11/115011
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A CMOS voltage reference circuit based on sub-threshold MOSFETs is proposed, which utilizes a temperature-dependent threshold voltage, a peaking current mirror and sub-threshold technology. The reference has been fabricated in an SMIC 0.13 mu m CMOS process with only MOS transistors and resistors. The experimental results show a reference voltage variation of 2 mV for a supply voltage ranging from 0.5 to 1.2 V and 0.8 mV for temperatures from 20 to 120 degrees C. The proposed circuit generates a reference voltage of 140 mV and consumes a supply current of 0.8 mu A at room temperature. The occupied area is only 0.019 mm(2).
引用
收藏
页数：5
相关论文
共 50 条
  • [1] A 140 mV 0.8μA CMOS voltage reference based on sub-threshold MOSFETs
    杨淼
    孙伟锋
    徐申
    王益峰
    陆生礼
    Journal of Semiconductors, 2011, 32 (11) : 127 - 131
  • [2] The design of voltage reference source of sub-threshold CMOS
    Song, M. X.
    Cao, Y. W.
    Sun, D.
    INFORMATION SCIENCE AND ELECTRONIC ENGINEERING, 2017, : 441 - 443
  • [3] A 415 nW, 0.8 V, Voltage Reference circuit Using MOSFETs in Saturation and sub-threshold regions
    Kushwaha, Dinesh
    Mishra, D. K.
    2016 11TH INTERNATIONAL CONFERENCE ON INDUSTRIAL AND INFORMATION SYSTEMS (ICIIS), 2016, : 149 - 153
  • [4] Sub-threshold operation CMOS bandgap voltage reference design
    Wu, Jin
    Liu, Guizhi
    Zhang, Lin
    Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics, 2005, 25 (03): : 375 - 378
  • [5] Pico Watt sub-threshold CMOS voltage reference circuit
    Sahafi, A.
    Sobhi, J.
    Koozekanani, Z. D.
    IEICE ELECTRONICS EXPRESS, 2013, 10 (04):
  • [6] A low power CMOS voltage reference circuit with sub threshold MOSFETs
    Department of ECE, National Institute of Technology, Trichy 620015 Tiruchirappalli, India
    Int. J. Inf. Commun. Technol., 2009, 1-2 (94-107):
  • [7] An Area-Efficient Temperature Compensated Sub-Threshold CMOS Voltage Reference
    Kim, Hyojun
    Park, Jun-Eun
    Jeong, Deog-Kyoon
    2020 17TH INTERNATIONAL SOC DESIGN CONFERENCE (ISOCC 2020), 2020, : 153 - 154
  • [8] High Temperature and Radiation Hard CMOS SOI Sub-threshold Voltage Reference
    Boufouss, E.
    Gerard, P.
    Simon, P.
    Francis, L. A.
    Flandre, D.
    2013 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S), 2013,
  • [9] SUB-THRESHOLD CONDUCTION IN MOSFETS
    TAYLOR, GW
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (03) : 337 - 350
  • [10] A 140-mV Variation-Tolerant Deep Sub-Threshold SRAM in 65-nm CMOS
    Sarfraz, Khawar
    He, Jin
    Chan, Mansun
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2017, 52 (08) : 2215 - 2220
12345