An Area-Efficient Temperature Compensated Sub-Threshold CMOS Voltage Reference

被引：0
|
作者：
Kim, Hyojun [1 ]
Park, Jun-Eun [2 ]
Jeong, Deog-Kyoon [1 ]
机构：
[1] Seoul Natl Univ, Seoul, South Korea
[2] Chungnam Natl Univ, Daejeon, South Korea
来源：
2020 17TH INTERNATIONAL SOC DESIGN CONFERENCE (ISOCC 2020) | 2020年
关键词：
voltage reference; PTAT; CTAT; CMOS; technology scaling;
D O I：
10.1109/ISOCC50952.2020.9333020
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
This paper presents an area-efficient voltage reference that mitigates the shortcomings of technology scaling. The proposed voltage reference offers temperature coefficient of 34 ppm/degrees C, line sensitivity of 2.88 %/V, with peak-to-peak process variation of 43 mV. The voltage reference operates in supply range from 0.7 V to 1.1 V. By exploiting the minimum possible gate length, it can be implemented in compact area of 0.00016 mm(2).
引用
收藏
页码：153 / 154
页数：2
相关论文
共 50 条
  • [1] The design of voltage reference source of sub-threshold CMOS
    Song, M. X.
    Cao, Y. W.
    Sun, D.
    INFORMATION SCIENCE AND ELECTRONIC ENGINEERING, 2017, : 441 - 443
  • [2] High Temperature and Radiation Hard CMOS SOI Sub-threshold Voltage Reference
    Boufouss, E.
    Gerard, P.
    Simon, P.
    Francis, L. A.
    Flandre, D.
    2013 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S), 2013,
  • [3] A sub-1V nanopower temperature-compensated sub-threshold CMOS voltage reference with 0.065%/V line sensitivity
    Magnelli, Luca
    Crupi, Felice
    Corsonello, Pasquale
    Iannaccone, Giuseppe
    INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, 2015, 43 (04) : 421 - 426
  • [4] Sub-threshold operation CMOS bandgap voltage reference design
    Wu, Jin
    Liu, Guizhi
    Zhang, Lin
    Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics, 2005, 25 (03): : 375 - 378
  • [5] Pico Watt sub-threshold CMOS voltage reference circuit
    Sahafi, A.
    Sobhi, J.
    Koozekanani, Z. D.
    IEICE ELECTRONICS EXPRESS, 2013, 10 (04):
  • [6] A 140 mV 0.8μA CMOS voltage reference based on sub-threshold MOSFETs
    杨淼
    孙伟锋
    徐申
    王益峰
    陆生礼
    Journal of Semiconductors, 2011, 32 (11) : 127 - 131
  • [7] A 0.6V temperature-stable CMOS voltage reference circuit with sub-threshold voltage compensation technique
    Cai, Zhikuang
    Chen, Chao
    IEICE ELECTRONICS EXPRESS, 2018, 15 (18):
  • [8] Design of Area efficient and Low Power Bandgap Voltage Reference using Sub-threshold MOS Transistors
    Khot, Prashant
    Shettar, Rajashekhar B.
    2015 19TH INTERNATIONAL SYMPOSIUM ON VLSI DESIGN AND TEST (VDAT), 2015,
  • [9] Temperature compensated CMOS voltage reference
    Laberge, S
    Roberts, GW
    2002 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL I, PROCEEDINGS, 2002, : 717 - 720
  • [10] A 140 mV 0.8 mu A CMOS voltage reference based on sub-threshold MOSFETs
    Yang Miao
    Sun Weifeng
    Xu Shen
    Wang Yifeng
    Lu Shengli
    JOURNAL OF SEMICONDUCTORS, 2011, 32 (11)
12345