THE EFFECT OF HYDROGEN ON BORON-DIFFUSION IN SIO2

被引：14
|
作者：
SHACHAMDIAMAND, Y
OLDHAM, WG
机构：
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1986年 / 15卷 / 04期
关键词：
D O I：
10.1007/BF02659636
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：229 / 233
页数：5
相关论文
共 50 条
  • [21] NEW MODEL FOR BORON-DIFFUSION IN SILICON
    ANDERSON, JR
    GIBBONS, JF
    APPLIED PHYSICS LETTERS, 1976, 28 (04) : 184 - 186
  • [22] EFFECT OF FLUORINE ON BORON-DIFFUSION IN THIN SILICON DIOXIDES AND OXYNITRIDE
    AOYAMA, T
    SUZUKI, K
    TASHIRO, H
    TODA, Y
    YAMAZAKI, T
    TAKASAKI, K
    ITO, T
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (01) : 417 - 419
  • [23] THE BORON-DIFFUSION IN SILICON - PHYSICAL ANALYSIS
    GAISEANU, F
    REVUE ROUMAINE DE PHYSIQUE, 1983, 28 (07): : 631 - 641
  • [24] BORON-DIFFUSION IN SILICON UNDER IRRADIATION
    YVES, MS
    JOURNAL DE MICROSCOPIE ET DE SPECTROSCOPIE ELECTRONIQUES, 1977, 2 (01): : 89 - 89
  • [25] BORON-DIFFUSION IN SILICON BY A VACANCY MECHANISM
    TSOUKALAS, D
    CHENEVIER, P
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 92 (02): : 495 - 501
  • [26] AES STUDY OF BORON-DIFFUSION IN SILICON FROM A BORON-NITRIDE SOURCE WITH HYDROGEN INJECTION
    PIGNATEL, G
    QUEIROLO, G
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (10) : 1805 - 1810
  • [27] BORON-DIFFUSION THROUGH GATE OXIDES
    WONG, CY
    LAI, FS
    DELINE, VR
    DELUCA, JC
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (11) : C470 - C470
  • [28] BORON-DIFFUSION IN POLYCRYSTALLINE SILICON LAYERS
    HORIUCHI, S
    BLANCHARD, R
    SOLID-STATE ELECTRONICS, 1975, 18 (06) : 529 - 532
  • [29] COMPLEX BORON-DIFFUSION LAYERS ON STEELS
    CHOCHOLOWSKI, M
    PRZYBYLOWICZ, K
    NEUE HUTTE, 1987, 32 (04): : 134 - 137
  • [30] ARSENIC AND BORON-DIFFUSION IN POLYCRYSTALLINE SILICON
    LEE, CH
    YEN, AC
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : C107 - C107
12345