Filling the gap

被引：0
|
作者：
Daniel Therriault
机构：
[1] École Polytechnique de Montréal,Daniel Therriault is in the Department of Mechanical Engineering
[2] Quebec,undefined
[3] H3C 3A7,undefined
[4] Canada. daniel.therriault@polymtl.ca,undefined
来源：
Nature Nanotechnology | 2007年 / 2卷
关键词：
D O I：
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中图分类号：
学科分类号：
摘要：
A new approach to making a biosensor with a field-effect transistor provides high sensitivity with simple processing by introducing a vertical nanogap into the device structure.
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页码：393 / 394
页数：1
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