Filling the gap

被引：7
|
作者：
Therriault, Daniel [1 ]
机构：
[1] Ecole Polytech, Dept Mech Engn, Montreal, PQ H3C 3A7, Canada
来源：
NATURE NANOTECHNOLOGY | 2007年 / 2卷 / 07期
关键词：
D O I：
10.1038/nnano.2007.199
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A new approach to making a biosensor with a field-effect transistor provides high sensitivity with simple processing by introducing a vertical nanogap into the device structure.
引用
收藏
页码：393 / 394
页数：2
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