Filling the gap

被引：7

作者：

Therriault, Daniel ^{[1
]}

机构：

[1] Ecole Polytech, Dept Mech Engn, Montreal, PQ H3C 3A7, Canada

来源：

NATURE NANOTECHNOLOGY | 2007年 / 2卷 / 07期

关键词：

Field effect transistors;

D O I：

10.1038/nnano.2007.199

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A new approach to making a biosensor with a field-effect transistor provides high sensitivity with simple processing by introducing a vertical nanogap into the device structure.

引用

页码：393 / 394

页数：2

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