Filling the gap

被引：0

作者：

Daniel Therriault

机构：

[1] École Polytechnique de Montréal,Daniel Therriault is in the Department of Mechanical Engineering

[2] Quebec,undefined

[3] H3C 3A7,undefined

[4] Canada. daniel.therriault@polymtl.ca,undefined

来源：

Nature Nanotechnology | 2007年 / 2卷

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A new approach to making a biosensor with a field-effect transistor provides high sensitivity with simple processing by introducing a vertical nanogap into the device structure.

引用

页码：393 / 394

页数：1

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