Synthesis,Structure and Electrical Properties of(SnO2)x(In2O3)1−x(x=0.5–1) Nanocomposites

被引：0
|
作者：
S. I. Rembeza
P. E. Voronov
B. M. Sinelnikov
E. S. Rembeza
机构：
[1] Voronezh State Technical University,
[2] North Caucasus State Technical University,undefined
来源：
Semiconductors | 2011年 / 45卷
关键词：
Indium Oxide; Free Carrier Concentration; High Frequency Magnetron; Antire Flection; Single Technological Process;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The experimental results of synthesizing thin films (<1 μm thick) of (SnO2)x(In2O3)1 − x (x = 0.5–1 wt) nanocomposites fabricated by high-frequency magnetron sputtering of metal-oxide targets in a controlled Ar + O2 atmosphere are presented. The films, deposited on hot substrates (400°C), are studied by the X-ray diffraction analysis, atomic-force microscopy, and optical and electrical methods. The effect of the synthesis conditions and film composition on the size of crystalline grains, band gap, and the concentration and mobility of free charge carriers was determined. It is shown that films of the composition (SnO2)x(In2O3)1 − x with x = 0.9 are the most promising for applications in gas sensorics.
引用
收藏
页码：1479 / 1482
页数：3
相关论文
共 50 条
  • [41] THE SYNTHESIS, CRYSTAL-STRUCTURE AND ELECTRICAL-PROPERTIES OF [FEXMN1-X]TA(O2)O2 WITH X-APPROXIMATE-TO O.3
    DENG, SQ
    ZHUANG, HG
    HUANG, JL
    JOURNAL OF SOLID STATE CHEMISTRY, 1992, 98 (01) : 40 - 47
  • [42] Synthesis, low-temperature sintering and the dielectric properties of the ZnO-(1-x)TiO2-x SnO2 (x=0.04-0.2)
    Liu, Xiangchun
    Gao, Feng
    Tian, Changsheng
    MATERIALS RESEARCH BULLETIN, 2008, 43 (03) : 693 - 699
  • [43] Defect structure of xSc2O3 · (1 − x)TiO2 (x = 0.4–0.5) solid solutions
    L. P. Lyashenko
    L. G. Shcherbakova
    E. S. Kulik
    R. D. Svetogorov
    Ya. V. Zubavichus
    Inorganic Materials, 2015, 51 : 158 - 162
  • [44] Defect structure of xY2O3 · (1 − x)TiO2 (x = 0.5–0.58) solid solutions
    L. P. Lyashenko
    L. G. Shcherbakova
    E. S. Kulik
    R. D. Svetogorov
    Ya. V. Zubavichus
    Inorganic Materials, 2014, 50 : 1230 - 1234
  • [45] Structure and physicochemical properties of the (AsSI)1−x(As2S3)x and (AsSeI)1−x(As2Se3)x glasses
    V. A. Bordovskii
    R. A. Castro
    A. V. Marchenko
    P. P. Seregin
    Glass Physics and Chemistry, 2007, 33 : 464 - 466
  • [46] Synthesis and electrical properties of (BaTiO3)1 −x(K0.5Bi0.5TiO3)x solid solutions
    T. A. Plutenko
    O. I. V’yunov
    A. G. Belous
    Inorganic Materials, 2012, 48 : 1183 - 1189
  • [47] Synthesis and properties of dielectric (HfO2)1 − x(Sc2O3)x films
    L. V. Yakovkina
    T. P. Smirnova
    V. O. Borisov
    V. N. Kichai
    V. V. Kaichev
    Inorganic Materials, 2013, 49 : 172 - 178
  • [48] Influence of the synthesis method on the structure and electrical properties of Sr1-xKxGeO3-x/2
    Fernandez-Palacios, S.
    dos Santos-Gomez, L.
    Compana, J. M.
    Porras-Vazquez, J. M.
    Cabeza, A.
    Marrero-Lopez, D.
    Losilla, E. R.
    CERAMICS INTERNATIONAL, 2015, 41 (05) : 6542 - 6551
  • [49] Preparation, Electrical Conductivity, and Sensory Properties of Oxide Films in the In2O3–SnO2 and In2O3–ZrO2 Systems
    M. V. Kalinina
    P. A. Tikhonov
    A. T. Nakusov
    Glass Physics and Chemistry, 2003, 29 : 626 - 631
  • [50] Electrical properties and magnetoelectric effect in (x)Ni0.5Zn0.5Fe2O4 + (1-x)BPZT composites
    Bammannavar, B. K.
    Naik, L. R.
    SMART MATERIALS AND STRUCTURES, 2009, 18 (08)
12345