Synthesis,Structure and Electrical Properties of(SnO2)x(In2O3)1−x(x=0.5–1) Nanocomposites

被引：0
|
作者：
S. I. Rembeza
P. E. Voronov
B. M. Sinelnikov
E. S. Rembeza
机构：
[1] Voronezh State Technical University,
[2] North Caucasus State Technical University,undefined
来源：
Semiconductors | 2011年 / 45卷
关键词：
Indium Oxide; Free Carrier Concentration; High Frequency Magnetron; Antire Flection; Single Technological Process;
D O I：
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中图分类号：
学科分类号：
摘要：
The experimental results of synthesizing thin films (<1 μm thick) of (SnO2)x(In2O3)1 − x (x = 0.5–1 wt) nanocomposites fabricated by high-frequency magnetron sputtering of metal-oxide targets in a controlled Ar + O2 atmosphere are presented. The films, deposited on hot substrates (400°C), are studied by the X-ray diffraction analysis, atomic-force microscopy, and optical and electrical methods. The effect of the synthesis conditions and film composition on the size of crystalline grains, band gap, and the concentration and mobility of free charge carriers was determined. It is shown that films of the composition (SnO2)x(In2O3)1 − x with x = 0.9 are the most promising for applications in gas sensorics.
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页码：1479 / 1482
页数：3
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