Structural and electric response of ITO/In2O3 transparent thin film thermocouples derived from RF sputtering at room temperature

被引：0
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作者：
Junzhan Zhang
Weichao Wang
Dan Liu
Ying Zhang
Peng Shi
机构：
[1] Xi’an University of Architecture and Technology,School of Materials and Mineral Resources
[2] Xi’an Jiaotong University,Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and Information Engineering
来源：
Journal of Materials Science: Materials in Electronics | 2018年 / 29卷
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摘要：
Transparent thin film thermocouples have unique characteristics that it can be applied when permit minimal optical interference at in-situ temperature measurement. ITO/In2O3 thin film thermocouples were prepared on fused quartz glasses at room temperature by RF magnetron sputtering. For contrast, ITO thin films post-annealed at different temperatures were investigated accordingly. All films showed good conductivities, smooth surface morphology and high transmission, indicating negligible affection of the post-annealing temperature. The as-deposited ITO film has a Seebeck coefficient of 84.4 µV ºC−1. The thermoelectric voltage of 13.6 mV and significantly lower drift rate of 2.39 °C h−1 were obtained at 190 °C for ITO/In2O3 thin film thermocouples without any heat treatment. This makes the ITO/In2O3 transparent thin film thermocouples great potential as a promising temperature sensor.
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页码：20253 / 20259
页数：6
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