Effect of channel layer thickness on the device characteristics of room temperature fabricated In2O3 thin-film transistors

被引：0
|
作者：
机构：
[1] Jiao, Yang
[2] Zhang, Xin-An
[3] Zhai, Jun-Xia
[4] Yu, Xian-Kun
[5] Ding, Ling-Hong
[6] Zhang, Wei-Feng
来源：
Zhang, X.-A. (xinanzhang@henu.edu.cn) | 1600年 / Editorial Office of Chinese Optics卷 / 34期
关键词：
Film thickness - Silica - Field effect transistors - Indium compounds - Threshold voltage - Thin film circuits - Thin films;
D O I：
10.3788/fgxb20133403.0324
中图分类号：
学科分类号：
摘要：
In2O3 thin-film transistors (TFTs) with different channel thicknesses were fabricated on SiO2/Si substrates by DC magnetron sputtering at room temperature. The effects of the channel thickness on the electrical properties of In2O3 TFTs with bottom-gate configuration were investigated. The performance of devices was found to be thickness dependent. The In2O3 TFT with the optimized channel thickness exhibites enhancement mode characteristics, the threshold voltage is 2.5 V, the current on-off ratio is 106, and the field-effect mobility is 6.2 cm2·V-1·s-1.
引用
收藏
相关论文
共 50 条
  • [1] Impact of layer thickness on the operating characteristics of In2O3/ZnO heterojunction thin-film transistors
    AlGhamdi, Wejdan S.
    Fakieh, Aiman
    Faber, Hendrik
    Lin, Yen-Hung
    Lin, Wei-Zhi
    Lu, Po-Yu
    Liu, Chien-Hao
    Salama, Khaled Nabil
    Anthopoulos, Thomas D.
    APPLIED PHYSICS LETTERS, 2022, 121 (23)
  • [2] Effects of the channel thickness on the structural and electrical characteristics of room-temperature fabricated ZnO thin-film transistors
    Oh, Byeong-Yun
    Jeong, Min-Chang
    Ham, Moon-Ho
    Myoung, Jae-Min
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (06) : 608 - 612
  • [3] Dependence of channel thickness on the performance of In2O3 thin film transistors
    Dhananjay
    Cheng, Shiau-Shin
    Yang, Chuan-Yi
    Ou, Chun-Wei
    Chuang, You-Che
    Wu, M. Chyi
    Chu, Chih-Wei
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 41 (09)
  • [4] Performance improvement of thin-film transistors with In2O3 channel engineering
    Han, Chengzhe
    Wang, Junjie
    Liu, Guoxia
    Shan, Fukai
    JOURNAL OF ASIAN CERAMIC SOCIETIES, 2022, 10 (03): : 660 - 665
  • [5] Investigation of the Electrical Characteristics of Bilayer ZnO/In2O3 Thin-Film Transistors Fabricated by Solution Processing
    Lee, Hyeonju
    Zhang, Xue
    Kim, Jung Won
    Kim, Eui-Jik
    Park, Jaehoon
    MATERIALS, 2018, 11 (11):
  • [6] Raman spectroscopy study of solution-processed In2O3 thin films: effect of annealing temperature on the characteristics of In2O3 semiconductors and thin-film transistors
    Lee, Hyeonju
    Kim, Bokyung
    Gao, Chun Yan
    Choi, Hyoung Jin
    Ko, Jae-Hyun
    Seo, Cheong Hoon
    Park, Jaehoon
    MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2019, 679 (01) : 38 - 47
  • [7] Enhanced Electrical Performance and Stability of Solution-Processed Thin-Film Transistors with In2O3/In2O3:Gd Heterojunction Channel Layer
    Li, Shasha
    Zhang, Xinan
    Zhang, Penglin
    Song, Guoxiang
    Yuan, Li
    NANOMATERIALS, 2022, 12 (16)
  • [8] InSnO:N homojunction thin-film transistors fabricated at room temperature
    Lin, Dong
    Yang, Jing-Ze
    Cheng, Jian-Rui
    Deng, Xu-Chu
    Chen, Yu-Shan
    Zhuang, Ping-Ping
    Li, Tie -Jun
    Liu, Jing
    VACUUM, 2023, 213
  • [9] Effect of active layer thickness on device performance of a-LZTO thin-film transistors
    Yue, Lan
    Pu, Hai-Feng
    Li, Hong-Lei
    Pang, Shu-Jian
    Zhang, Qun
    SUPERLATTICES AND MICROSTRUCTURES, 2013, 57 : 123 - 128
  • [10] Device characteristics of InSnO thin-film transistors with a modulated channel
    Kim, Chang Eun
    Yun, Ilgu
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 27 (12)
12345