Effect of channel layer thickness on the device characteristics of room temperature fabricated In2O3 thin-film transistors

被引：0
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作者：
机构：
[1] Jiao, Yang
[2] Zhang, Xin-An
[3] Zhai, Jun-Xia
[4] Yu, Xian-Kun
[5] Ding, Ling-Hong
[6] Zhang, Wei-Feng
来源：
Zhang, X.-A. (xinanzhang@henu.edu.cn) | 1600年 / Editorial Office of Chinese Optics卷 / 34期
关键词：
Film thickness - Silica - Field effect transistors - Indium compounds - Threshold voltage - Thin film circuits - Thin films;
D O I：
10.3788/fgxb20133403.0324
中图分类号：
学科分类号：
摘要：
In2O3 thin-film transistors (TFTs) with different channel thicknesses were fabricated on SiO2/Si substrates by DC magnetron sputtering at room temperature. The effects of the channel thickness on the electrical properties of In2O3 TFTs with bottom-gate configuration were investigated. The performance of devices was found to be thickness dependent. The In2O3 TFT with the optimized channel thickness exhibites enhancement mode characteristics, the threshold voltage is 2.5 V, the current on-off ratio is 106, and the field-effect mobility is 6.2 cm2·V-1·s-1.
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