Controlling the Josephson contact parameters in a semiconductor-superconductor eutectic composition

被引：0
|
作者：
G. I. Isakov
机构：
[1] National Academy of Sciences of Azerbaijan,Institute of Physics
来源：
Technical Physics Letters | 2005年 / 31卷
关键词：
Radiation; Crystallization; Electric Current; Electromagnetic Radiation; GaSb;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The current-voltage (I–U) curve was studied for the Josephson contact in a GaSb-V2Ga5 eutectic composition comprising parallel whiskers of a superconducting V2Ga5 phase formed by oriented crystallization in a semiconducting GaSb matrix. It is established that the parameters of the I-U curve can be controlled by varying the angle between the direction of electric current and the axis of whisker orientation. Using the Josephson relation hω=2eV and considering the parallel connection of infinite Josephson clusters in the structure studied, a formula is derived, n0Nhω=2eV, which can be used for estimating the electromagnetic radiation frequency ω of the Josephson weak links, the number N of infinite Josephson clusters, and the number n0N of Josephson weak links in the semiconductor-superconductor eutectic compositions obtained by means of oriented crystallization.
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页码：208 / 211
页数：3
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