Thermodynamic stability of bulk and epitaxial Ge1−xSnx semiconductor alloys

被引:0
|
作者
V. G. Deibuk
Yu. G. Korolyuk
机构
[1] Chernivtsi National University,
来源
Semiconductors | 2002年 / 36卷
关键词
Total Energy; Phase Separation; Magnetic Material; Electromagnetism; Thermodynamic Stability;
D O I
暂无
中图分类号
学科分类号
摘要
The total energy for an unconstrained and biaxially confined model of Ge1−xSnx alloys was calculated using molecular-dynamics simulation. This made it possible to study the thermodynamic stability of both disordered and ordered phases of the semiconductor alloys. A remarkable suppression of the phase separation in Ge1−xSnx due to biaxial strain was found.
引用
收藏
页码:1073 / 1076
页数:3
相关论文
共 50 条
  • [31] Ge1-xSnx alloys pseudomorphically grown on Ge(001)
    de Guevara, HPL
    Rodríguez, AG
    Navarro-Contreras, H
    Vidal, MA
    APPLIED PHYSICS LETTERS, 2003, 83 (24) : 4942 - 4944
  • [32] Molecular-dynamics simulation of structural properties of Ge1−xSnx substitutional solid solutions
    V. G. Deibuk
    Yu. G. Korolyuk
    Semiconductors, 2001, 35 : 283 - 286
  • [33] STABILITY OF BULK AND PSEUDOMORPHIC EPITAXIAL SEMICONDUCTORS AND THEIR ALLOYS
    MBAYE, AA
    WOOD, DM
    ZUNGER, A
    PHYSICAL REVIEW B, 1988, 37 (06): : 3008 - 3024
  • [34] Assessment of Ge1-xSnx Alloys for Strained Ge CMOS Devices
    Takeuchi, S.
    Shimura, Y.
    Nishimura, T.
    Vincent, B.
    Eneman, G.
    Clarysse, T.
    Demeulemeester, J.
    Temst, K.
    Vantomme, A.
    Dekoster, J.
    Caymax, M.
    Loo, R.
    Nakatsuka, O.
    Sakai, A.
    Zaima, S.
    SIGE, GE, AND RELATED COMPOUNDS 4: MATERIALS, PROCESSING, AND DEVICES, 2010, 33 (06): : 529 - 535
  • [35] Ge1-xSnx Alloys Pseudomorphically Grown on Ge (001) by Sputtering
    Ladron de Guevara, H. Perez
    RodriGuez, A. G.
    Navarro-Contreras, H.
    Vidal, M. A.
    SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES, 2012, 50 (09): : 413 - 417
  • [36] Reduced Pressure CVD Growth of Ge and Ge1-xSnx Alloys
    Wirths, S.
    Buca, D.
    Mussler, G.
    Tiedemann, A. T.
    Hollaender, B.
    Bernardy, P.
    Stoica, T.
    Gruetzmacher, D.
    Mantl, S.
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2013, 2 (05) : N99 - N102
  • [37] Raman study of strained Ge1-xSnx alloys
    Lin, Hai
    Chen, Robert
    Huo, Yijie
    Kamins, Theodore I.
    Harris, James S.
    APPLIED PHYSICS LETTERS, 2011, 98 (26)
  • [38] Growth of Ge1 − xSnx solid solution films and study of their structural properties and some of their photoelectric properties
    A. S. Saidov
    Sh. N. Usmonov
    U. P. Asatova
    Semiconductors, 2012, 46 : 1088 - 1095
  • [39] Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires
    Subhajit Biswas
    Jessica Doherty
    Dzianis Saladukha
    Quentin Ramasse
    Dipanwita Majumdar
    Moneesh Upmanyu
    Achintya Singha
    Tomasz Ochalski
    Michael A. Morris
    Justin D. Holmes
    Nature Communications, 7
  • [40] Semiconductor, topological semimetal, indirect semimetal, and topological Dirac semimetal phases of Ge1-xSnx alloys
    Lan, H. -S.
    Chang, S. T.
    Liu, C. W.
    PHYSICAL REVIEW B, 2017, 95 (20)