Defects and short-and medium-range order in the structural network of hydrogenated amorphous silicon

被引：0
|
作者：
O. A. Golikova
V. Kh. Kudoyarova
机构：
[1] Russian Academy of Sciences,A. F. Ioffe Physicotechnical Institute
来源：
Semiconductors | 1998年 / 32卷
关键词：
Silicon; Boron; Structural Network; Magnetic Material; Electromagnetism;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The effect of defects (dangling Si-Si bonds) produced during the deposition of a-Si:H films by the glow-discharge method and upon boron doping, as well as photoinduced defects, on changes in the short-and medium-range order in the structural network is investigated. It is shown for a constant defect density ND=const that charged defects influence the a-Si:H structure much more strongly than do neutral defects.
引用
收藏
页码：779 / 781
页数：2
相关论文
共 50 条
12345