Medium-range order and optoelectronic properties of a tetrahedrally coordinated hydrogenated amorphous semiconductor

被引：7

作者：

Golikova, OA ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2001年 / 35卷 / 11期

关键词：

D O I：

10.1134/1.1418078

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Correlations were determined between the medium-range-order characteristic in an a-Si:H structure and the density of defects, their charge state, the optical band gap, and its spatial fluctuations. It was shown that the modification of the structure at the medium-range-order level, owing to the formation of nanoinclusions, can lead to a radical increase in photoconductivity and to ordering of the structure of the amorphous matrix. (C) 2001 MAIK "Nauka/Interperiodica".

引用

页码：1314 / 1319

页数：6

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