Defects and short- and medium-range order in the structural network of hydrogenated amorphous silicon

被引：7

作者：

Golikova, OA ^{[1
]}

Kudoyarova, VK ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 1998年 / 32卷 / 07期

关键词：

D O I：

10.1134/1.1187504

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effect of defects (dangling Si-Si bonds) produced during the deposition of a-Si:H films by the glow-discharge method and upon boron doping, as well as photoinduced defects, on changes in the short- and medium-range order in the structural network is investigated. It is shown for a constant defect density N-D = const that charged defects influence the a-Si:H structure much more strongly than do neutral defects. (C) 1998 American Institute of Physics.

引用

页码：779 / 781

页数：3

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