Performance enhancement of top contact pentacene-based organic thin-film transistor (OTFT) using perylene interlayer between organic/electrode interface

被引：0
|
作者：
Tribeni Borthakur
Ranjit Sarma
机构：
[1] Jagannath Barooah College,Thin Film Lab., Department of Physics
来源：
Applied Physics A | 2017年 / 123卷
关键词：
Contact Resistance; Threshold Voltage; Perylene; Metal Electrode; Organic Semiconductor;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We have investigated the effect of perylene interlayer between the organic/electrode interface on the electrical performance of a top contact pentacene-based OTFT. We have found the performance enhancement of the OTFT device. The OTFT devices with perylene layer show better field effect mobility and on–off ratio than that of having only metal electrodes. It also lowers the subthreshold slope and threshold voltage compared to single-layered OTFT devices.
引用
收藏
相关论文
共 50 条
  • [21] Performance Improvement of Top-Contact Pentacene-Based Organic Thin-Film Transistors by Inserting an Ultrathin Teflon Carrier Injection Layer
    Fan, Ching-Lin
    Chiu, Ping-Cheng
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (10)
  • [22] Electron traps and hysteresis in pentacene-based organic thin-film transistors
    Gu, G
    Kane, MG
    Doty, JE
    Firester, AH
    [J]. APPLIED PHYSICS LETTERS, 2005, 87 (24) : 1 - 3
  • [23] Performance improvement mechanisms of pentacene-based organic thin-film transistors using TPD buffer layer
    Lee, Ching-Ting
    Lin, Yi-Min
    [J]. ORGANIC ELECTRONICS, 2013, 14 (08) : 1952 - 1957
  • [24] Performance improvement of pentacene-based organic thin-film transistor with the planar bottom-contact structure and the bi-layer gate dielectric
    Fan, Ching-Lin
    Lin, Zuo
    Huang, Chao-Hung
    [J]. 2012 19TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD): TFT TECHNOLOGIES AND FPD MATERIALS, 2012, : 199 - 202
  • [25] Characteristics of pentacene organic thin film transistor with top gate and bottom contact
    袁广才
    徐征
    赵谡玲
    张福俊
    姜薇薇
    宋丹丹
    朱海娜
    李少彦
    黄金英
    黄豪
    徐叙瑢
    [J]. Chinese Physics B, 2008, 17 (05) : 1887 - 1892
  • [26] Characteristics of pentacene organic thin film transistor with top gate and bottom contact
    Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
    不详
    [J]. Chin. Phys., 2008, 5 (1887-1892):
  • [27] Effect of pentacene thickness on bottom and top contact organic thin film transistor
    Gupta, Dipti
    Katiyar, Monica
    [J]. IDW/AD '05: PROCEEDINGS OF THE 12TH INTERNATIONAL DISPLAY WORKSHOPS IN CONJUNCTION WITH ASIA DISPLAY 2005, VOLS 1 AND 2, 2005, : 1081 - 1084
  • [28] Characteristics of pentacene organic thin film transistor with top gate and bottom contact
    Yuan Guang-Cai
    Xu Zheng
    Zhao Su-Ling
    Zhang Fu-Jun
    Jiang Wei-Wei
    Song Dan-Dan
    Zhu Hai-Na
    Li Shao-Yan
    Huang Jin-Ying
    Huang Hao
    Xu Xu-Rong
    [J]. CHINESE PHYSICS B, 2008, 17 (05) : 1887 - 1892
  • [29] Improving the performance of organic thin-film transistor with a doped interlayer
    Hu, Wei
    Zhao, Yi
    Ma, Chunsheng
    Hou, Jingying
    Liu, Shiyong
    [J]. MICROELECTRONICS JOURNAL, 2007, 38 (4-5) : 509 - 512
  • [30] Interface characteristics between Au electrode and pentacene layer in organic thin-film transistors
    Park, J
    Kang, SI
    Jang, SP
    Choi, JS
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (1B): : 648 - 651
12345