Characteristics of pentacene organic thin film transistor with top gate and bottom contact

被引：20
|
作者：
Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China [1 ]
不详 [2 ]
机构：
来源：
Chin. Phys. | 2008年 / 5卷 / 1887-1892期
关键词：
Thin film transistors;
D O I：
10.1088/1674-1056/17/5/057
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