Numerical analysis of HgCdTe dual-band infrared detector

In this paper we describe recent progress in the HgCdTe multilayer heterostructures grown by metaloorganic chemical vapour deposition on GaAs substrates for photodetectors operated above 200 K. We present example of design and characterization of the new classical N+–n–P+–p–N+ back to back HgCdTe dual-band photodiode structure, that operates within the mid-wavelength infrared band in sequential mode. A numerical modelling was used for investigation of the device design on the current responsivity and dark currents. The program based on the solution of the system of the carrier transport equations including the whole spectrum of various generation and recombination mechanisms consisting of Shockley–Read–Hall, Auger and radiative generation-recombination terms. Additionally, tunneling effects such as band-to-band and trap-assisted tunnelling models are included in the continuity equations by incorporating them as additional generation–recombination processes.