Dual-band infrared detectors

被引:12
|
作者
Rogalski, A [1 ]
机构
[1] Mil Univ Technol, Inst Appl Phys, PL-00908 Warsaw, Poland
来源
关键词
n-P-N HgCdTe photodiodes; QWIPs; dual-band detectors; focal plane arrays; sequential and simultaneous operations;
D O I
10.1117/12.382128
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
As the infrared technology continues to advance, there is a growing demand for multispectral detectors for advanced IR systems with better target discrimination and identification. Both HgCdTe detectors and quantum well GaAs/AlGaAs photodetectors offer wavelength flexibility from medium wavelength to very long wavelength and multicolor capability in these regions. The main challenges facing all multicolor devices are more complicated device structures, thicker and multilayer material growth, and more difficult device fabrication, especially when the array size gets larger and pixel size gets smaller. In the paper recent progress in development of two-color HgCdTe photodiodes and quantum well infrared photodetectors is presented.
引用
收藏
页码:17 / 30
页数:14
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