Study of a deep donor level in n-GaAs by electron transport data obtained under hydrostatic pressure

被引：0
|
作者：
M. I. Daunov
U. Z. Zalibekov
I. K. Kamilov
A. Yu. Mollaev
机构：
[1] Russian Academy of Sciences,Amirkhanov Institute of Physics, Dagestan Scientific Center
来源：
Semiconductors | 2014年 / 48卷
关键词：
GaAs; Hydrostatic Pressure; Pressure Dependence; Hall Coefficient; Mobility Ratio;
D O I：
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学科分类号：
摘要：
The experimental pressure dependences of the resistivity and Hall effect at hydrostatic pressures from atmospheric to 18 GPa in n-GaAs are quantitatively analyzed. In the pressure range 10 ≤ P ≤ 18 GPa, a deep donor center is found. The position of its energy level relative to the conduction-band Γ valley edge at atmospheric pressure and its relation to the arsenic vacancy are discussed.
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页码：996 / 998
页数：2
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